S8550 C(120-200)

                       JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD   TO-92 Plastic-Encapsulate Transistors   TO-92  S8550 75$16,6725313   (0,77(5  FEATURE ([FHOOHQWK)(/LQHDULW\  %$6(   &2//(&725  Equivalent Circuit 1  23 = XXX 6 'HYLFHFRGH  )'  +,' -,  . -/   "/2, ' . - 01 ("234/ 555   &('  ,& &  "  ! "-.* "-.* "-./  6 TO-92 Bulk 1000pcs/Bag 67$  72 Tape  2000pcs/Box     "    !  #$%&  Collector-Base Voltage -40 V #$'&  Collector-Emitter Voltage -25 V #'%&  Emitter-Base Voltage -5 V $  Collector Current -Continuous -0.5 A "(  Collector Power Dissipation 625 mW  Thermal Resistance I rom Junction Wo Ambient  200  Junction Temperature 1  /W  ș +  )  *  www.cj-elec.com # -55 a St orage Temperature 1    ),$XJ201 '5'$ $5$6$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test conditions M Collector-base breakdown voltage 9%5&%2 ,& X$,(  Collector-emitter breakdown voltage 9%5&(2 ,& P$,%  Emitter-base breakdown voltage 9%5(%2 ,( X$,&  T9:      9 9 9 Collector cut-off current ,&%2 9&% 9,(    X$ Collector cut-off current ,&(2 9&( 9,%    X$ Emitter cut-off current ,(%2 9(% 9,&    X$ K)( 9&( 9,& P$     K)( 9&( 9,& P$     Collector-emitter saturation voltage 9&(VDW ,& P$,% P$   9 Base-emitter saturation voltage 9%(VDW ,& P$,% P$   9  0+] DC current gain 9&( 9,& P$ I7  Transition frequency  I 0+]  CLASSIFICATION OF hFE(1) Rank Range %  & '   www.cj-elec.com '    )$XJ Typical Characteristics hFE Static Characteristic -90 -400uA COMMON EMITTER Ta=25ć -360uA -70 -280uA -60 -240uA -50 -200uA -40 -160uA -30 -120uA -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE —— -10 COMMON EMITTER VCE=-1V 10 -12 IC 100 T a= ć -10 COLLECTOR CURRENT IC -500 —— IC -100 (mA) T =2 5ć a T =1 00 ć a COMMON EMITTER VCE=-1V -600 -300 ć 25 T a= =10 -1 -10 —— -900 IC Ta=25ć -1 -100 -10 COLLECTOR CURRENT VCB/VEB PC 750 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) -500 (mA) COMMON EMITTER VCE=-6V 10 -1200 50 Cib 10 —— IC 100 BASE-EMMITER VOLTAGE VBE (mV) Cob/Cib -100 400 -10 -0 0ć 10 T a= fT VBE -500 (mA) IC —— COLLECTOR CURRENT -100 -1 IC -100 -10 -500 TRANSITION FREQUENCY fT (MHz) -1 -100 VCEsat -500 =10 -400 -10 COLLECTOR CURRENT 2 5ć T a= -800 -1 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VBEsat -1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 100 IB=-40uA -10 COLLECTOR CURRENT IC (mA) Ta=25ć -80uA -20 -0 Ta=100ć -320uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -80 IC —— 500 Cob f=1MHz IE=0/IC=0 —— IC (mA) Ta 625 500 375 250 125 Ta=25 ć 1 -0.1 -1 REVERSE VOLTAGE www.cj-elec.com -10 V 0 -20 (V) 0 25 50 75 100 AMBIENT TEMPERATURE  Ta 125 150 (ć ) ),$XJ201  &;